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Imec Advances 200mm GaN-on-Si Technology Closer to Manufacturing

At last week’s IEEE International Electron Devices Meeting 2015, world-leading nano-electronics research center imec presented three novel aluminum gallium nitride (AlGaN)/ gallium nitride (GaN) stacks featuring optimized low dispersion buffer designs. Moreover, imec optimized the epitaxial p-GaN growth process on 200mm silicon wafers, achieving e-mode devices featuring beyond state-of-the-art…