GaN Transistors
Explore how LPCVD-Si₃N₄ thickness influences polarization Coulomb field scattering in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). This study reveals crucial insights into improving electron mobility, device performance, and reliability in advanced semiconductor technologies. Ideal for researchers and engineers in materials science, nanoelectronics, and semiconductor physics.
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