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Infineon Expands CoolGaN Family with Compact Bidirectional Switches for Mobile Devices
Infineon released two devices in its CoolGaN BDS 40V G3 bidirectional switch family: IGK048B041S and IGK120B041S. The products reduce PCB footprint by up to 82 percent and cut component count in half. Each device integrates the function of two back-to-back silicon MOSFETs into a single component.
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Infineon Technologies AG expands its CoolGaN BDS 40 V G3 bidirectional switch (BDS) family with two new devices, the IGK048B041S and IGK120B
Infineon Technologies expands its CoolGaN BDS 40 V G3 family with new bidirectional switch devices that deliver up to 82% PCB footprint reduction while cutting component count in half. Designed for smartphones, notebooks, and wearables, these innovations enable faster switching, improved efficiency, and smarter power management in ultra-compact designs.
Infineon Technologies AG expands its CoolGaN BDS 40 V G3 bidirectional switch (BDS) family with two new devices, the IGK048B041S and IGK120B
Infineon Technologies has expanded its CoolGaN BDS 40 V G3 family with new bidirectional switch devices that deliver up to 82% PCB footprint reduction for portable power designs in smartphones, notebooks, and wearables.
Infineon provides CoolGaN power transistors to Universal Microelectronics for company’s new 250 W adapter for networking PoE applications.
Infineon provides CoolGaN power transistors to UMEC for company’s new 250 W adapter for networking Power over Ethernet (PoE) applications.
Infineon Technologies's CoolGaN technology powers Universal Microelectronics' new 250W PoE adapter, enhancing efficiency and performance in networking applications. This collaboration delivers compact, high-frequency solutions ideal for telecommunications, industrial, medical, and consumer electronics.
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Infineon and Lingji partner on GaN-based inverters for light electric vehicles
September 11, 2025 /SemiMedia/ — Infineon Technologies AG has signed a memorandum of understanding with Lingji Innovation Technology, a subsidiary of Ninebot, to develop gallium nitride (GaN)-based inverter systems for light electric vehicles (LEVs). The partnership aims to enhance drivetrain efficiency, reduce system weight, and deliver compact inverter solutions for two-wheeler and shared…
Infineon has introduced its first fully in-house manufactured radiation-hardened GaN transistors, built on its proven CoolGaN platform.
Infineon Technologies is introducing CoolGaN Bidirectional Switch 650 V G5, a GaN switch capable of actively blocking voltage.
