#semiconductorresearch

GaN Transistors

Explore how LPCVD-Si₃N₄ thickness influences polarization Coulomb field scattering in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). This study reveals crucial insights into improving electron mobility, device performance, and reliability in advanced semiconductor technologies. Ideal for researchers and engineers in materials science, nanoelectronics, and semiconductor physics.

Event Title: International Environmental Scientists Award   website: https://environmentalscientists.org Contact : [email protected] Nominate now: https://environmentalscientists.org/award-nomination/?ecategory=Awards&rcategory=Awardee

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Study on the law of atom migration rate of stress-dislocation subsurface damage in silicon wafer

In ultra-precision machining, the variation of atom migration rate leads to stress concentration on the silicon wafer surface, causing subsurface damage. By coupling the Weierstrass-Mandelbrot fractal surface function method with molecular dynamics, a model of the rough surface of silicon wafers is constructed, and the subsurface damage of silicon wafers during the grinding process is analyzed.

Global Particle Physics Excellence Awards

website url: physicistparticle.com/

Nomination link: https://physicistparticle.com/award-nomination/?ecategory=Awards&rcategory=Awardee