Jun 12
The coolest tech breakthroughs are often the least flashy. Researchers may have found a better way to make ultrathin semiconductors at scale, and that could matter a lot for the chips powering tomorrow’s AI.
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The coolest tech breakthroughs are often the least flashy. Researchers may have found a better way to make ultrathin semiconductors at scale, and that could matter a lot for the chips powering tomorrow’s AI.
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GaN Transistors
Explore how LPCVD-Si₃N₄ thickness influences polarization Coulomb field scattering in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). This study reveals crucial insights into improving electron mobility, device performance, and reliability in advanced semiconductor technologies. Ideal for researchers and engineers in materials science, nanoelectronics, and semiconductor physics.
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Study on the law of atom migration rate of stress-dislocation subsurface damage in silicon wafer
In ultra-precision machining, the variation of atom migration rate leads to stress concentration on the silicon wafer surface, causing subsurface damage. By coupling the Weierstrass-Mandelbrot fractal surface function method with molecular dynamics, a model of the rough surface of silicon wafers is constructed, and the subsurface damage of silicon wafers during the grinding process is analyzed.
Global Particle Physics Excellence Awards
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