Fujitsu takes Tokyo polytechnical university by hand and adopts 65 nanometers and develops 256Mbit FeRAM
Fujitsu is microelectronic ' Shanghai) Limited company announced a few days ago, Tokyo polytechnical university (Tokyo-Tech) , Fujitsu laboratory (Fujitsu Laboratories Ltd.) And Fuji Tsu Co., Ltd. has already jointly developed one and used in the non-volatile ferroelectric RAM of new generation (Ferroelectric Random Access Memory, FeRAM) New materials. This kind of bismuth, iron, oxygen element composite material (BiFeO3 or BFO) ,Can make the memory capacity of the data reach the fivefold of the material at present used in the production of FeRAM.
Use the material based on BFO, in similar to adopting 180nm technology to make the device of FeRAMing, 65nm technology of adopting Fujitsu can produce new FeRAM. The use of this kind of material, can expand the memory capacity of FeRAM to 256M bit.
Seeing that a new generation individualize move the electronic product ' Such as IC card) There will be improvement by a wide margin in power consumption and speed in characteristics such as small and exquisite, security, easily operated,etc. that there must be, new FeRAM, in order to meet this kind's needs. To this kind of electronic product, FeRAM technology can offer the most appropriate non-volatile storage device, it is estimated samples will be released in 2009.
About Fujitsu's new FeRAM material
BFO is the ferroelectric material with perovskite type structure formed by bismuth, iron and oxygen atom. The ferroelectric material generally used at present is lead zirconate titanate (PZT or Pb (Zr, Ti) O3) ,However, its electric power storage ability is low, but the staging is limited. The technology of PZT will be reflected when confining to 130nm node, because with the reduction of the memory cell district, the higher the requirement for polarising is. This technological limitation is expected to appear in 2009. Having developed a kind of BFO thin film capacitor to add manganese, it can reduce and let out the electric current, and have 180-220 micro; Exchange electricity (switching charge) of C/cm2 Qsw, this is equivalent to that surplus polarises twice of 2Pr. All these will fully reveal in the huge staging potentiality of nodal respect of technology in the future.
Adopting FeRAM that 65nm technology makes can use BFO which adds manganese to make, its fabrication facilities and using 180nm technology to produce the resembling that FeRAM uses at present. The staging that FeRAM which uses this kind of new material also can have the maximal one, can make the memory capacity up to 2014.
With the development thoroughly to BFO, high-capacity 256Mbit FeRAM can be realized, this kind of FeRAM compares with capacity of Off-The-Shelf 1Mbit, density is 2 grades higher. The improvement of the density, make the application of FeRAM in the new field (for example, rapid start, it makes the computer use after the starting up at once) Expanded, and is no longer only limited to in the field of safe application. FeRAM can also be used in the apparatus of the electronic paper, this apparatus can let users have a look around and read a large amount of information printed on the paper traditionally. Fujitsu will continue its developing and studying the plan, so that can carry on embedded large scale integration (LSI) in the future . And the manufacture about BFO material and BFO capacitor is technical will continue to study.
