Nov 18, 2018
TOS Rand sketch card by MRAM
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TOS Rand sketch card by MRAM
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A journey of 1000 miles begins with the first step or whatever.
Janice Rand Sketch Card by MRAM
Everspin Technologies, the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM).
Everspin Technologies has secured a $40 million agreement to advance MRAM solutions for military and aerospace applications, reinforcing the growing importance of high-reliability memory in mission-critical systems. The multi-year contract with a U.S. prime contractor will focus on delivering advanced Toggle MRAM process technology and engineering services, supporting defense industrial base requirements with durable, non-volatile memory solutions built for extreme environments.
UNISYST MRAM family, a new generation of unified memory designed to fundamentally change how embedded systems store and access.
Everspin Technologies has launched a new generation of unified memory solutions based on STT-MRAM technology. Designed to combine the speed of SRAM with the persistence of flash memory, the solution enables instant-on performance, faster data access, and high endurance, helping simplify system design while improving reliability for industrial, aerospace, and edge computing applications.
“System designers are running into the physical and performance limits of NOR flash, especially as process nodes move below 40 nanometers and workloads become more demanding,” said Sanjeev Aggarwal, president and CEO of Everspin Technologies. “With UNISYST, we are extending our MRAM roadmap to higher densities while giving customers a practical way to start with PERSYST today and migrate to a code-and-data MRAM architecture as soon as it is available.”
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Everspin Technologies, announced further advancements in its high-reliability PERSYST xSPI STT-MRAM lineup.
Everspin Technologies has expanded its xSPI MRAM portfolio with a 256Mb high-reliability chip, delivering greater memory density and scalable persistent storage for mission-critical applications.
“Advancing our high-reliability product family through production qualification and expanding density options reflects steady progress against our technology roadmap,” said Sanjeev Aggarwal, president and CEO of Everspin Technologies. “Customers designing long-lifecycle systems require validated memory solutions with predictable performance, and we are extending the PERSYST platform to meet those needs across a wider range of densities.”
Everspin Technologies, the world’s leading developer and manufacturer of magnetoresistive random access memory (MRAM) xSPI MRAM.
Everspin Technologies has expanded its xSPI MRAM portfolio with a 256Mb high-reliability chip, delivering greater memory density and scalable persistent storage for mission-critical applications.
“Advancing our high-reliability product family through production qualification and expanding density options reflects steady progress against our technology roadmap,” said Sanjeev Aggarwal, president and CEO of Everspin Technologies. “Customers designing long-lifecycle systems require validated memory solutions with predictable performance, and we are extending the PERSYST platform to meet those needs across a wider range of densities.”
The MRAM Global Innovation Forum is the industry’s premier platform for Magnetoresistive Random Access Memory (MRAM) technology.
The 2025 MRAM Global Innovation Forum is set to bring together industry leaders and researchers to showcase the latest advances in MRAM technology. From faster, energy-efficient memory architectures to breakthroughs shaping next-generation computing, the forum highlights how MRAM is moving closer to large-scale adoption across AI, automotive, and industrial applications—marking a key milestone in the evolution of non-volatile memory.