GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog I²C EEPROM.
GigaDevice Semiconductor Inc. has expanded its non-volatile memory portfolio with the launch of the GD24CL I²C EEPROM series—designed to deliver high endurance, long-term data retention, built-in ECC protection, and ultra-low power consumption for next-generation embedded systems. Optimized for industrial, IoT, energy, networking, and data center applications, the new series addresses the growing demand for secure and reliable data storage.
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GigaDevice launches GD24CL I²C EEPROM series, delivering secure, reliable non-volatile memory for industrial, IoT, networking, energy, and d
GigaDevice has expanded its non-volatile memory portfolio with the launch of the GD24CL I²C EEPROM series—designed to deliver high endurance, long-term data retention, built-in ECC protection, and ultra-low power consumption for next-generation embedded systems. Optimized for industrial, IoT, energy, networking, and data center applications, the new series addresses the growing demand for secure and reliable data storage.
Magnetoresistive Random Access Memory (MRAM) The Future of High-Speed Memory
As the demand for faster, more reliable, and energy-efficient memory technologies grows, Magnetoresistive Random Access Memory (MRAM) is emerging as a game-changer. Unlike traditional memory solutions, MRAM combines high-speed performance with non-volatile storage, allowing data to be retained even when power is turned off.
The magnetoresistive random access memory (MRAM) market size is predicted to worth around USD 16.46 billion by 2035 from USD 1.52 billion in
MRAM is gaining traction across industries such as consumer electronics, automotive, industrial automation, artificial intelligence, and data centers. Its low power consumption, durability, and fast read/write capabilities make it an ideal choice for next-generation computing applications.
According to market research, the global MRAM market is expected to witness significant growth over the next decade, driven by increasing adoption in IoT devices, AI-powered systems, and advanced semiconductor technologies.
Magneto resistive Random Access Memory (MRAM) Market The Future of High-Speed Memory
The Magnetoresistive Random Access Memory (MRAM) market is experiencing rapid growth as industries seek faster, more reliable, and energy-efficient memory solutions. MRAM combines the speed of traditional RAM with the non-volatile capabilities of flash memory, making it ideal for applications in consumer electronics, automotive systems, industrial automation, and data centers.
The magnetoresistive random access memory (MRAM) market size is predicted to worth around USD 16.46 billion by 2035 from USD 1.52 billion in
The global MRAM market size was valued at USD 1.52 billion in 2025 and is projected to reach USD 16.46 billion by 2035, growing at a CAGR of 25.1% from 2026 to 2035.
Key Growth Drivers
Rising demand for high-performance computing and AI applications
Growing adoption of IoT and edge devices
Expansion of automotive electronics and autonomous technologies
Increasing focus on energy-efficient memory solutions
Market Outlook
With continuous advancements in semiconductor technology and increasing investments in next-generation memory solutions, MRAM is expected to play a crucial role in the future of data storage and computing
CEA-Leti announced major advance in memory technology: demonstration of ferroelectric RAM (FeRAM) scaled to the 22nm manufacturing
CEA-Leti has successfully scaled Ferroelectric RAM (FeRAM) technology to the 22nm node, paving the way for denser, faster, and more energy-efficient memory solutions for Edge AI applications.
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Artificial intelligence is on a relentless march across the computing landscape. While about one in seven data centers is equipped to host A
As AI workloads continue to grow exponentially, traditional memory architectures are being pushed to their limits. High Bandwidth Flash (HBF) is emerging as a promising solution, delivering the speed, scalability, and efficiency required for next-generation AI data centers and edge computing applications. Read this full article by: Alper Ilkbahar, CTO, Sandisk.
CEA-Leti and Fraunhofer IPMS have successfully completed the first exchange of ferroelectric memory wafers within the FAMES Pilot Line, mark
CEA-Leti and Fraunhofer IPMS have successfully validated a FeRAM wafer exchange, marking a major milestone toward a collaborative European platform for next-gen non-volatile memory.
UNISYSTÂ MRAM family, a new generation of unified memory designed to fundamentally change how embedded systems store and access.
Everspin Technologies has launched a new generation of unified memory solutions based on STT-MRAM technology. Designed to combine the speed of SRAM with the persistence of flash memory, the solution enables instant-on performance, faster data access, and high endurance, helping simplify system design while improving reliability for industrial, aerospace, and edge computing applications.
“System designers are running into the physical and performance limits of NOR flash, especially as process nodes move below 40 nanometers and workloads become more demanding,” said Sanjeev Aggarwal, president and CEO of Everspin Technologies. “With UNISYST, we are extending our MRAM roadmap to higher densities while giving customers a practical way to start with PERSYST today and migrate to a code-and-data MRAM architecture as soon as it is available.”
