#dislocationmechanics

Study on the law of atom migration rate of stress-dislocation subsurface damage in silicon wafer

In ultra-precision machining, the variation of atom migration rate leads to stress concentration on the silicon wafer surface, causing subsurface damage. By coupling the Weierstrass-Mandelbrot fractal surface function method with molecular dynamics, a model of the rough surface of silicon wafers is constructed, and the subsurface damage of silicon wafers during the grinding process is analyzed.

Global Particle Physics Excellence Awards

website url: physicistparticle.com/

Nomination link: https://physicistparticle.com/award-nomination/?ecategory=Awards&rcategory=Awardee