#ramtron

A few days ago, it has had high-speed read/write characteristics that Ramtron International Corporation has released two, new serial port non-volatile F-RAM products of low working voltage and available device function, two wiring system interface (I2C) including having FM24V02 and having by interface (SPI) FM25V02. Two 256Kb devices are the newest type of the V series F-RAM products of Ramtron Company, the voltage range of job is from 2.0V to 3.6V, adopt the foot SOIC of sector standard 8 to capsulate, have shortcut, undelelayed (NoDelay? )Characteristics such as load, nearly limitless read/write number of times and low power consumption,etc., it is the industrial control, meter, medical electron, 256 Kb serial port flashing memory of the military affairs, game, computer and other applications and compatible substitute products of one bunch of EEPROM memorizers.

Ramtron marketing manager Mike Peters claims: "These two series 256 Kb V and one bunch of mouthparts one, compare previous generation's product lower working voltage and high performance, it can be used for substituting old type devices such as FM24L256 and FM25L256B,etc.. We are expanding the V series product line constantly, fulfil Ramtron commitments to environment, offer efficiency more high nonvolatile memory products, avoid the reliance on the battery at the same time. "

About FM24V02 And FM25V02

FM24V02 can carry out write operation with I2C total linear velocity of the highest 3.4 MHz, and support the traditional bus frequency of 100 kHz and 400 kHz. This device has no delay of loads, and not need to carry on the roll polling of dataing begins the next bus cycle. In addition, FM24V02 offers and is up to 100,000 billion (1E14) Read/write number of times,order of magnitude of comparing EEPROM higher several piece. FM24V02 does not need to offer the internal raised mains voltage for write circuit while carrying out the write operation, therefore the power consumption is far lower than EEPROM. FM24V02 work pattern consumption lower than 150μ A (usually under 100KHz) ,Under the standby mode is 90μ A, and the standby mode consumption is lower to 5μ A.

The electric consumption that FM25V02 makes operation in 40 MHz SPI clock rate is only 3mA, under the standby mode is 90μ A, under the standby mode is 5μ A. The typical operation power consumption of FM25V02 is 38μ A / MHz, have reduced a order of magnitude than the flashing memory or EEPROM products consumption of this kind of serial port.

Two clusters of the intersection of mouthpart and piece FM24V02 and FM25V02 have canonial read-only the intersection of device and ID, can let host computer confirm manufacturer, memory capacity, the intersection of products and the intersection of edition and information. They offer available unique read-only sequence number, confirm, have the whole world have host computer circuit board or system of ID alone while being convenient. Finally, FM24V02 and FM25V02 can guarantee to work in - 40 degrees of C to the temperature range of +85 degrees of C, the suitable industrial application very much.

About V series F-RAM

The V series F-RAM products of Ramtron are adopted and made by the advanced 130nm CMOS production technologies of Ramtron and Dezhou instrument's common development, including the combining a memorizer of I2C, SPI and byte width of many kinds of capacity. Its advanced manufacture process can improve the device characteristic, and increase the function collection. Besides FM24V02 and FM25V02, V series F-RAM includes the following types:

A few days ago, Ramtron International Corporation was claimed to be put out and adopted FBGA encapsulated 8 megabits (Mb) F-RAM memorizer. FM23MLD16 adopts 48 foot ball grid arrays (FBGA) Encapsulated 8 - Mb, 3V and mouth non-volatile RAM, visit fast and nearly reading and writing advantages such as number of times and low power consumption,etc. many times. This device and asynchronous static RAM (SRAM) The pin is compatible, directed primarily to the industrial control system such as robotics, network RAID and store solution, multi-functional printer, automated navigation system, and various system design based on SRAM.

Ramtron marketing manager Mike Peters claims: "This 8 - Mb F-RAM combines a memorizer, and 4 - Mb FM22LD16 that we release recently, design, used for, meet customer in the intersection of load and intensive data employ, to higher demand of memory capacity. These two products have compatible characteristic of pins, it is apt to realize the staging of memory capacity. The system designer uses FM23MLD16, can improve F-RAM density by 7 times in capsulating PCB space of the same magnitude with TSOP32. "

Products key feature

FM23MLD16 is a nonvolatile memory of 512K * 16, adopts the parallel interface of industrial standard to realize and deposit and withdraw, access time, for 60ns, one access period 115ns. Is this device with the ' undelelayed ' (NoDelay? )Characteristic, according to reading and writing by linear velocity, it write to wipe 1E14 (100,000 billion) at least in life-span Time, and offer the data hold facility in 10 years.

It needs it with battery-driven SRAM (BBSRAM) to compare ,FM23MLD16 does not need the battery and carry on the data backup, the characteristic is more outstanding. Capsulate and weld the solution as the genuine surface, FM23MLD16 does not need to need doing the step over again correlated to battery like SRAM of the battery backup, and have high to able to bear tide, impact-resistance and the intersection of anti-vibration and ability, make F-RAM become, require tight severe applied ideal choice of industry. FM23MLD16 includes the low-voltage and measures the function, when the mains voltage is lower than critical threshold value, will prevent the visit of the memorizer. Thus the improper visit to prevent the memorizer and in this case presents, avoid the data are destroyed.

Ramtron introduces first 2 megabits of industry (Mb) Serial F-RAM memorizer, adopt 8 foot TDFN (5.0 x 6.0 mm)s Capsulation. FM25H20 adopts advanced 130 nanometers (nm) The production of cmos process, it is a non-volatile F-RAM memorizer of the high density, operates by low power consumption, and have the high speed is serial to have the interface outside (SPI) . This 3V, 2Mb serial F-RAM device have nearly limitless serviceability with the total linear velocity load of maximum, capsulate and offer greater data acquisition ability through being miniature, make the system designer reduce cost and plate card space in measuring and printer contourgraph application.

FM25H20 is ideal substitute products of the serial flashing memory, for requiring in the accurate electronic systems of low power consumption and minimum plate card space, including walkie medical equipment such as acouophone,etc., their actually miniature data handler, restriction of the limited and low power dissipation that but receive the space. Compared with flashing memory, advantage of F-RAM include, reduce working current, the intersection of writing speed and fast, the intersection of load and serviceability than the intersection of flashing memory and higher a plurality of order of magnitude by a wide margin.

Ramtron strategy market expansion manager Duncan Bennett explains: "Need to improve the ability of data acquisition in a new generation of it employ as to those, increase the intersection of plate card and measurement and the intersection of printer and customer but speech of space, sincere 2Mb this whether natural product extend in bunches of competent F-RAM. FM25H20 with identical light the intersection of position occupied and area, walk half trillion bit string F-RAM customer offer the storage capacity up to quadruple. Besides promoting the existing system, the technology develop, promote F-RAM enter, need the intersection of low power consumption and memorizer by a plurality of also the intersection of space and limited new developing market seriously, such as the walkie medical equipment. "

Characteristic of the products

FM25H20 is 8 nonvolatile memories of 256K x, read and write with the high total linear velocity up to 40MHz, the hold facility of the data with nearly limitless serviceability, 10 years, and low working current. This device has industrial standard SPI interface, the high literary sketch which has optimized F-RAM enters ability. FM25H20 also has software and hardware write protect function, can avoid unexpected load and data corruption.

This 2Mb serial F-RAM works by low power consumption, the consumption in 40MHz reading down / write operation is lower than 10mA, the consumption is 80& micro under the alert status; A (representative value) ,It is 3& micro that the ultra under-current standby mode makes the consumption; A (representative value) . FM25H20 is compatible with equal serial flashing memory device connecting pin, and possess fast access, high serviceability and low working current,etc. characteristic, the comparative flashing memory is more wining. This device is within the range of whole industrial temperature (- 40 ℃ to +85 ℃) Work under voltage 2.7 to 3.6V. It please visit websites to understand more detailed information about FM25H20: www.ramtron.com/products/nonvolatile-memory/serial-product.aspx? id =100.

About 130 nanometers of advanced crafts

130 nanometers that FM25H20 is generally acknowledged with the instrument of Dezhou (nm) Based on CMOS manufacture process. Imbed the non-volatile F-RAM module in the standard CMOS 130 nm logic craft, has only used two extra mask steps.

Stock

RAMTRON introduces first non-volatile state hold units of semi-conductive trade, can keep the signal state on request with such novel device, and return to the correct state automatically during power up. FRAM unique high literary sketch enters ability and nearly reads and writes the life-span and guaranteeing this kind of function many times.

The non-volatile state hold unit series of low power consumption that Ramtron introduces newly have two sections of products at present: FM1105 and FM1106, working voltage is 5V and 3V respectively. Two devices both adopt small-scale SOT23 to capsulate. And the other products of this series have been already in planning.

This kind of state conservator uses just like D flip-flop simply. It is similar traditional in use of it logical circuit,but during deenergization can autosave and last logic state, thus the design of the control function of the reduced system. Such non-volatile state conservator is very suitable for the switch interface, relay driver, LED driver, wrong mark recording, the power up state is measured, non-volatile counter, disassembly preventing indicating device, open the indicating device, electrical machinery opening/closing control, replace the Toggle switch and replaces and jump many kinds of application such as the wire device.

Ramtron executive vice president Mike Alwais claims: "The non-volatile state conservator is the module of fundamental construction, most engineers can use in one's own design. FM1105 and FM1106 have adopted the first batch of products of FRAM novel product series with extraordinary technology. It is a revolutionary concept to apply nonvolatile storage to logic, has and produced and has not needed the battery to remember and store the unique products of the output value. Change any of state can self-record in non-volatile and ferroelectric latch. Function this attribute to, store technical fast load and it reads and writes number of times to be nearly limitless advantage while being ferroelectric in fact. "

Product performance

Low power consumption non-volatile state hold unit does not need to read the memorizer or take up the dedicated processor I/O pin, can set up and pay depositing and withdrawing to the non-volatile system continuously. It can realize that change the memory of the frequent signal, and needn't notify in advance. In addition, it can also be in the nonvolatile storage not needing to increase and pay and is set up systematically under the situations of systematic expenses and serial memory pin.

The job voltage range of FM1105 is 4.5- 5.5V, under the circumstances that 1 KHz changes the state continuously, the working current is smaller than 15uA. The working voltage of FM1106 is 2.7- 3.6V, under the circumstances that 1 KHz changes the state continuously, the working current is smaller than 5 microamperes. Two devices both support the mode change many times, the frequency is high to 1 MHz, in the whole industrial temperature range (- 40 ℃ to 85 ℃) Have the work. Inquire about more products details, please log on websites www.ramtron.com/statesaver.

Non-volatile state conservator in relay control

The correct state that the non-volatile state hold unit is very suitable for the electrical relay or switch is set up. In normal working hour, the system knows the hold unit of setting state. Once present the trouble of supplying power, the state hold unit will record the final state and self-recovery during power up immediately. This makes electrical relay by the start of accurate state - turn on or turn off according to the applied requirement. As the substitutes of switches such as the Toggle switch or jumping the wire device,etc., the non-volatile state hold unit can change the switch to set up by software, can still continue depositing and withdrawing signals in once power up.

The non-volatile state conservator catches the error condition

A lot of systems need to know the indicating information that has happened of the mistake, this may be a dangerous condition, equipment failure or other status informations. The non-volatile state conservator catches and keeps this kind of incident easiest and fast method while breaking the electric fault. The system points out the appearance of a certain error condition to the non-volatile state conservator, it is during deenergization will store this state,once power up later can self-recovery. Different from storing the data in the memorizer, this kind of instruction is continuity, and can be used as signal control.

Price and supplying

A few days ago, Ramtron International Corporation claimed to put out FM24CL32, high-speed read/write characteristic, low-voltage ran to offer, and the serial port non-volatile RAM device of outstanding data maintainability. FM24CL32 is 32Kb nonvolatile memory, working voltage is to adopt 8 feet SOIC to capsulate, uses the two-wire system from 2.7V to 3.6V (I2C) Agreement; And offer shortcut, undelelayed (NoDelay) Load, nearly limitless number of times of read/write (1E14) And low power consumption characteristic. FM24CL32 is suitable for industrial control, measures, medical treatment, military affairs, entertainment, computing application and other fields, can be regarded as the direct substitute products which combine EEPROM memorizer.

Ramtron marketing manager Mike Peters points out: "FM24CL32 is our standard memory product series, consume 32 Kb device to choose after adding I2C serial port low power that users are familiar with. Because the write circuit of F-RAM does not need power of internal boost, so the new product is the ideal nonvolatile memory needing data collection of frequent or fast write operation to employ. "

Until tight severe industrial control employ, use the intersection of EEPROM and device, longer write time its may make data lose, but FM24CL32 can avoid this kind of risk. In addition, even if FM24CL32 can still offer the 45 -year long authentic data to keep at 75 ℃ operating temperature, totally meet the requirements for storage life of the data of power measure trade.

About FM24CL32

FM24CL32 the intersection of serial port and structure of FRAM capacity 8 of 4,096 x, use the two-wire system of the industrywide standard (I2C) Communication interface. FM24CL32 has no delay of loads, and it is executable next bus cycle not to need to carry on the roll polling of data, efficiency is more wining than EEPROM. FM24CL32 high energy carry on load with total linear velocity of 1 MHz, support 100 kHz and bus line frequency of 400 kHz the most, and offer the 45 -year long authentic data to keep, solve by EEPROM and other systematic complicatedness, the intersection of time and expenses and the intersection of system level and problem of reliability that nonvolatile memory cause at the same time.