#power semiconductor

Modern industrial automation systems depend heavily on high-performance power electronics, especially in applications where electric motors, variable speed drives, and automated production systems are required. Without electric motors and advanced electronic control systems, modern industrial processes would not achieve the level of efficiency and performance expected today.

Insulated Gate Bipolar Transistors (IGBTs) are widely used to control high-power electrical drives in industrial environments. These devices enable efficient switching of large electrical loads while requiring only low control power. In many systems, the connection between control units and power modules is achieved using polymer optical fiber (POF), which provides galvanically isolated and interference-free signal transmission.

However, traditional IGBT control systems that rely on optical fibers often require multiple individual connections between the controller and the motor-side circuit board. Signal conversion from electrical to optical and back again is handled by transceivers mounted directly on the control board. This setup can take up significant space, resulting in larger and less efficient system designs.

To address these limitations, HARTING has developed a more compact and efficient solution for IGBT control systems. The new approach was presented at the SPS IPC Drives trade fair in Nuremberg, showcasing advancements in industrial connectivity and power electronics integration.

The proposed system relocates optical transceivers from the control board into a pluggable module, combining electrical connection and optical transmission in a single integrated solution. This “electrical connection and optical transmission” concept significantly reduces space requirements and improves system design flexibility.

HARTING uses solutions such as the Han-Eco® 10A series to support compact electrical connectivity in automation systems. The Han® housing system is designed to meet the increasing demands of industrial automation, offering robust protection, strain relief, and secure fiber management for polymer optical fiber connections.

Modern industrial automation systems depend heavily on high-performance power electronics, especially in applications where electric motors, variable speed drives, and automated production systems are required. Without electric motors and advanced electronic control systems, modern industrial processes would not achieve the level of efficiency and performance expected today.

Insulated Gate Bipolar Transistors (IGBTs) are widely used to control high-power electrical drives in industrial environments. These devices enable efficient switching of large electrical loads while requiring only low control power. In many systems, the connection between control units and power modules is achieved using polymer optical fiber (POF), which provides galvanically isolated and interference-free signal transmission.

However, traditional IGBT control systems that rely on optical fibers often require multiple individual connections between the controller and the motor-side circuit board. Signal conversion from electrical to optical and back again is handled by transceivers mounted directly on the control board. This setup can take up significant space, resulting in larger and less efficient system designs.

To address these limitations, HARTING has developed a more compact and efficient solution for IGBT control systems. The new approach was presented at the SPS IPC Drives trade fair in Nuremberg, showcasing advancements in industrial connectivity and power electronics integration.

The proposed system relocates optical transceivers from the control board into a pluggable module, combining electrical connection and optical transmission in a single integrated solution. This “electrical connection and optical transmission” concept significantly reduces space requirements and improves system design flexibility.

HARTING uses solutions such as the Han-Eco® 10A series to support compact electrical connectivity in automation systems. The Han® housing system is designed to meet the increasing demands of industrial automation, offering robust protection, strain relief, and secure fiber management for polymer optical fiber connections.

IXYS Corporation has announced the introduction of a new addition to its 4.5kV power semiconductor family, designed to support high-voltage industrial power conversion and advanced IGBT module applications. Developed by IXYS UK, the new device is a high-performance fast recovery diode (FRD) optimized for use alongside the company's extensive range of press-pack IGBT modules.

The new component features a rated operating current of 460A and incorporates advanced semiconductor processing and assembly technologies. Compared to older floating silicon designs, the updated structure offers improved thermal stability, enhanced mechanical robustness, and superior switching performance. The device is capable of supporting extremely high current change rates, exceeding 2kA per microsecond, while maintaining soft recovery characteristics and low switching losses.

Packaged in a fully hermetic ceramic housing with copper electrodes, the diode is designed for high-reliability power electronics environments. Its construction allows compatibility with series-connected press-pack IGBT modules used in demanding industrial applications, including high-voltage converters, power transmission systems, and railway traction equipment.

The new E0460QC45E diode is optimized for use with IXYS UK's 4500V IGBT modules and can serve as an antiparallel diode, neutral-point clamp diode, or snubber diode in multilevel converter topologies. These applications are commonly found in renewable energy systems, industrial motor drives, HVDC power transmission, and large-scale power conversion equipment.

The market research report on Insulated Gate Bipolar Transistor (IGBT) technology in the United States provides an overview of the IGBT industry by analyzing several dominant segments of the market. These segments are based on product types, applications, end-user industries, and overall market scenarios, offering a structured view of industry performance and demand patterns.

The regional distribution of the IGBT industry across the United States is also considered in this analysis. Key regions include the West, Southwest, Mid-Atlantic, New England, South, and Midwest. This geographic breakdown is used to evaluate market performance and identify regional differences in demand, growth, and adoption of IGBT technologies.

The report provides critical insights and factual data on the U.S. IGBT industry, supported by statistical analysis of market drivers, restraints, and future growth opportunities. It examines how industrial demand, technological development, and power electronics applications influence market expansion across different sectors.

In addition, the study highlights major trends and emerging opportunities within the IGBT market, including increased adoption in industrial automation, renewable energy systems, transportation, and power conversion applications. These trends are expected to shape the future growth of the IGBT market in the United States.

According to IC Insights, the global power transistor market has experienced significant volatility since the 2009 semiconductor recession and the strong recovery in 2010. Over the past decade, market performance has fluctuated due to inventory corrections, weak economic conditions, and pricing pressure across several product categories.

After declining by 7% in 2015, global power transistor sales recovered in 2016, growing by 5% to reach approximately US$12.9 billion. The market was expected to continue this recovery trajectory, with revenues projected to grow by around 6% in 2017, reaching US$13.6 billion. This growth marked the first consecutive annual increase in six years, surpassing the previous record level of US$13.5 billion set in 2011.

The report highlights that between 2011 and 2013, the power transistor market experienced a period of instability, including consecutive annual declines of 8% and 6%. This followed a strong rebound in 2010 and 2011, when the market grew significantly after the global recession. In 2014, the market rebounded again with a 14% increase, but this was followed by another decline in 2015.

By 2016, the market began to stabilize, and IC Insights indicated that moderate growth is expected in the coming years. Despite short-term fluctuations, the long-term trend for power semiconductors remains positive due to increasing demand in industrial systems, automotive electronics, renewable energy, and power conversion applications.

According to IC Insights, the global power transistor market has experienced significant volatility since the 2009 semiconductor recession and the strong recovery in 2010. Over the past decade, market performance has fluctuated due to inventory corrections, weak economic conditions, and pricing pressure across several product categories.

After declining by 7% in 2015, global power transistor sales recovered in 2016, growing by 5% to reach approximately US$12.9 billion. The market was expected to continue this recovery trajectory, with revenues projected to grow by around 6% in 2017, reaching US$13.6 billion. This growth marked the first consecutive annual increase in six years, surpassing the previous record level of US$13.5 billion set in 2011.

The report highlights that between 2011 and 2013, the power transistor market experienced a period of instability, including consecutive annual declines of 8% and 6%. This followed a strong rebound in 2010 and 2011, when the market grew significantly after the global recession. In 2014, the market rebounded again with a 14% increase, but this was followed by another decline in 2015.

By 2016, the market began to stabilize, and IC Insights indicated that moderate growth is expected in the coming years. Despite short-term fluctuations, the long-term trend for power semiconductors remains positive due to increasing demand in industrial systems, automotive electronics, renewable energy, and power conversion applications.

Alpha and Omega Semiconductor Limited (AOS), a global designer and supplier of a wide range of power semiconductors and power integrated circuits, is expanding its family of fast-switching IGBT devices in its H-series 1200V class. These new devices are designed to meet the growing demands of high-frequency industrial applications, particularly in welding systems and high-voltage power converters.

One of the latest products, the AOK40B120H1, has been developed to support industrial welding equipment and high-frequency converters operating with three-phase AC input or high-voltage power systems. It delivers strong performance in high switching frequency environments, making it well suited for heavy-duty industrial welding machines and other demanding power conversion systems.

The AOK40B120H1 is built on Alpha and Omega Semiconductor’s proprietary AlphaIGBT™ technology platform. It features fast switching capability and a low VCE(sat) of approximately 1.8V, which helps reduce both conduction and switching power losses. This improves overall system efficiency and thermal performance in industrial applications.

With a 1200V minimum BVCES rating and strong latch-up robustness, the device provides improved safety margins and more reliable operation under challenging electrical conditions. These characteristics make it suitable for engineers designing high-reliability industrial systems that require both performance and durability.

According to Dr. Brian Suh, Vice President of the IGBT Product Line at AOS, the AOK40B120H1 is designed specifically to meet the needs of system designers working with 1200V IGBT-based welding applications. Its low conduction losses and optimized switching behavior enable efficient and reliable operation while also supporting cost-effective system design. AOS IGBTs are positioned to address key challenges faced by customers through innovative semiconductor technology and application-focused solutions.

Although the discrete power semiconductor and module segment is considered a mature market, it is currently dominated by Infineon, which generates approximately twice the revenue of the second-largest manufacturer in this product category, according to Dr. Pierric Gueguen, Business Unit Manager at Yole Développement. This strong leadership position highlights a significant imbalance in market share across the industry and places pressure on other players to strengthen their competitiveness.

In this market environment, such dominance is not viewed as sustainable in the long term. Analysts expect continued consolidation in the IGBT industry as companies seek to acquire additional technological assets and expand their market position in order to compete more effectively with the leading player. This trend is already visible through multiple mergers and acquisitions across the power electronics sector.

Examples of this consolidation include the acquisition of IXYS by Littelfuse and the acquisition of Fairchild Semiconductor by ON Semiconductor. These transactions reflect a broader strategy among semiconductor companies to strengthen their portfolios in power devices, expand intellectual property holdings, and improve competitiveness in the IGBT and power module markets.

According to Yole, the IGBT market is a well-established supply chain with strong partnerships across different levels of the value chain. However, the increasing importance of power modules—especially in automotive, renewable energy, UPS, and industrial applications—is reshaping the industry structure and encouraging new entrants to move toward higher-value module-level solutions.