Navitas has introduced a new isolated through-hole package for its SiC MOSFET portfolio, delivering enhanced thermal performance, reliability, and ease of integration for high-power applications.
“High-power system design is fundamentally challenged by the need to balance efficient thermal management with robust high-voltage isolation,” said Paul Wheeler, VP & GM of the SiC Business Unit at Navitas Semiconductor. “The UHV-TO-247-4-ISO package overcomes critical thermal and isolation challenges, delivering power module–class performance in a compact discrete form factor. As a highly efficient building block, it empowers system designers to unlock the full potential of GeneSiC TAP SiC MOSFET technology in next-generation applications such as immersion-cooled and liquid-cooled power electronics.”