#material developments

Transphorm Inc. announced its first Gen III Gallium-Nitride transistors in a PQFN88 package. The new 650V devices are available in two versions, the TP65H070LSG (source tab) and TP65H070LDG (drain tab), and offer an on-resistance of 72mΩ. The adoption rate of high voltage GaN power electronics is on the rise. Transphorm has announced several customers with …

The RDGD3100I3PH5EVB from NXP Semiconductors is a fully functional three-phase power gate drive reference design populated with six GD3100 gate drivers with fault management and supporting control circuitry. This board supports SPI daisy chain communication for programming and communication with three high-side gate drivers and three low-side gate drivers independently. Included is S32SDEV-CON18 PCIe cable …

Ascatron reported that it has obtained €3.5 million funding for SiC product development. The company secured the funding as a result of the recently completed sale of its shares in a joint venture company, BASIC Semiconductor in China. BASIC Semiconductor was founded by Swedish company Ascatron and Chinese firm Bronze Technology Ltd. in 2017. Ascatron …

Researchers at King Abdullah University of Science and Technology (KAUST) say that some of the energy wasted as heat could be recaptured with an inexpensive thermoelectric nanomaterial that they developed. The researchers speculate that the thermoelectric nanomaterial could capture the heat from devices ranging from mobile phones to vehicle engines, and transform it directly into …

The STEVAL-DPSTPFC1 reference design from STMicroelectronics is a 3.6kW bridgeless totem pole boost circuit that achieves a digital power factor correction (PFC) with inrush current limiter (ICL). It’s intended to help engineers to design an innovative topology with the latest ST power kit devices: silicon carbide MOSFET (SCTW35N65G2V), thyristor SCR (TN3050H-12WY), isolated FET driver (STGAP2S) …

Transphorm Inc. introduced its second 900V FET, the Gen III TP90H050WS, enhancing the industry’s only 900V GaN product line. These devices now enable higher voltage automotive electronics and three-phase industrial systems to leverage GaN’s power density, efficiency and speed. Further, the new FET’s platform is based on the company’s 650V predecessor, which the company claims …

The CRD300DA12E-XM3 300kW three-phase inverter reference design from Wolfspeed demonstrates high system-level power density and efficiency obtained by using Wolfspeed’s new XM3 module platform. The XM3 is optimized for SiC MOSFETs in a high-density, low-inductance footprint, which can reduce system losses and simplify overall design for low-loss, high-frequency operation. The three-phase inverter has greater than …

UnitedSiC has expanded its UF3C FAST series product offering by introducing a 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin Sense discrete package option. The UF3C120150K4S offers a typical on-resistance (RDS(on)) of 150mΩ, bringing the total number of 4-leaded FAST Series devices up to six and extending the on-resistance range of the entire …