Ampleon BLP0408H9S30G 30W LDMOS transistor 400-860 MHZ
👉 https://www.ldteq.com/article/4781.html
#Ampleon #transistor
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Ampleon BLP0408H9S30G 30W LDMOS transistor 400-860 MHZ
👉 https://www.ldteq.com/article/4781.html
#Ampleon #transistor

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Ampleon CLL3H0914L-700/CLL3H0914LS-700 High-Power RF GaN-SiC HEMT Transistors
👉 https://www.core-ics.com/detail/44.html
#Ampleon #Transistors
Ampleon RF transistors: 0.4-5GHz coverage for mobile broadband solutions https://www.core-ics.com/detail/34.html
The brand-new original Ampleon BLF573S HF/VHF power LDMOS transistor is designed for HF to 500MHz and 300W, specifically for broadcast transmission and industrial, scientific and medical (ISM) applications.
👉https://www.ldteq.com/article/4759.html
Efficiency: 70% efficiency (at 300W output)
Gain: 27.2dB
Voltage: 50V
Input return loss: 13dB
Working current: 900mA
The Ampleon C4H22P400A base station applies a 400W GaN power transistor
https://www.ldteq.com/article/4719.html
The frequency range is from 1800 MHz to 2200 MHz.

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Ampleon RF power transistor
Ampleon公司为国防通信和电子对抗等场景提供硅横向双扩散金属氧化物半导体(Si LDMOS)和氮化镓碳化硅高电子迁移率晶体管(GaN-SiC HEMT)两种晶体管技术,对比了其电压范围、适用频段、典型功率等特性及优势场景,还分别列出了Si LDMOS和GaN-SiC HEMT
Ampleon ART1K9FH transistor 1900W,50/55V
Frequency range: 1 MHz - 500 MHz
Output power: Up to 1900 W
Drain-source voltage: Up to 55V
Power gain: 23.5 dB - 24.6 dB
Input reflection loss: -19 dB
Efficiency: 68% - 72.5%
Ampleon公司ART1K9FH是一款基于Advanced Rugged Technology (ART)平台的高功率RF LDMOS晶体管,工作电压50-55V,可在1MHz-500MHz频段提供最高1900W输出功率,具有23.5-24.6dB增益、68%-72.5%效率和
Ampleon power Amplifier (SSPA) RF power transistor
Ampleon提供了一系列优化的固态功率放大器(SSPA)产品组合,覆盖不同频率范围,具有1 kW至数兆瓦的功率输出能力,兼具高效率、高可靠性(晶体管寿命超20年)和优异散热性能(低热阻),同时简化了电气和热系统设计流程,是粒子加速器等应用的优选解决方案,并提供具体型号支持。