Thermal oxide silicon wafers (SiO2) for use as semiconductor and dielectric material in MEMS devices
Thermal oxide silicon wafer or SiO2 wafer contains a silicon oxide layer which is formed on a bare silicon wafer surface at elevated temperature in an oxidant’s presence through thermal oxidation process. Thermal oxidation is obtained by exposing silicon wafer to a combination of oxidizing agents and heat to make a layer of silicon oxide or SiO2. The layer is most commonly made with hydrogen and/or oxygen gas, although other halogens can be used for this purpose. The growth of silicon oxide layer takes place in an ambient air to about 20Å thick.
Thermal oxidation on silicon wafers can be performed in two ways – rapid thermal processing or RTP method, and wet thermal oxide processing. In the RTP process, the wafer is exposed to rapid heating to over 1,000 °C for a very short period of time, and then slowly cooled down to room temperature to prevent cracking. In the wet thermal oxide method, a mixture of hydrogen and high-purity oxygen is burnt at nearly 1,000 °C, which results in the production of water vapor. Although the method may not produce a very high quality end product and may not be used as a masking layer, it is advantageous in the way it produces a higher growth rate than dry oxidation.
SiO2 wafers that meet your specific requirements
Thermal oxide silicon wafers are used in electronics industry as a semiconductor or dielectric material, or integrated in Micro Electro Mechanical Systems (MEMS) devices. WaferPro provides high-quality SiO2 wafers in a variety of dimensions ranging from 2” to 300 mm. This trusted supplier of best quality thermal oxide silicon wafers ensures that your specific requirements are met by choosing prime grade and defect-free silicon wafers as a substrate so that a high uniform layer of thermal oxide is formed in the furnace. In micro-technology, Silicon dioxide (SiO2) is the main insulating material. Thermal oxidation is commonly used to produce an insulating oxide layer.
Silicon reacts with oxygen, leading to a moving interface towards the substrate. Dry oxidation is carried out at temperatures between 850 and 1200 °C and demonstrates low growth rates. This leads to the production of a high-quality oxide for MOS gate insulation. In cases where highest quality thin silicon oxide layer is required, then dry oxidation is the preferred method to obtain SiO2 wafers than wet oxidation.
WaferPro provides below three types of SiO2 wafers:
Dry Thermal Oxide on Both Sides of Wafer
Dry Thermal Oxide on Single Side of Wafer
Dry Chlorinated Thermal Oxide with Forming Gas Anneal
WaferPro offers both single and double-sided thermal oxide silicon wafers for use in your various applications. Though double side SiO2 wafers is most common, you can also get single side thermal oxide silicon wafer where thermal oxidation is done on one side of the wafer while other side of the thermal oxide silicon wafer is modified by dissolving it in BHF. If you want both single and double side thermal oxide silicon wafers, then WaferPro can provide you in the same batch delivery to optimize costs for you.








