Jun 5, 2025
WIN Semiconductors has launched a 0.12μm GaN power process gate-length D-mode GaN HEMT technology on SiC substrates, available for high .
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WIN Semiconductors has launched a 0.12μm GaN power process gate-length D-mode GaN HEMT technology on SiC substrates, available for high .
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WIN Semiconductors has announced launch of its new 0.12μm gate-length depletion-mode GaN HEMT technology, NP12-1B, built on SiC substrates