Power Integrations, announced that PowiGaN gallium-nitride (GaN) technology is now rated at up to 2200 V, far exceeding the voltage capabili
Power Integrations has unveiled the industry's first 2200V PowiGaN technology, setting a new benchmark for high-voltage gallium nitride (GaN) solutions. This breakthrough enables higher power density, improved efficiency, and simpler system architectures for demanding applications including AI data centers, electric vehicles, photovoltaic systems, battery energy storage, and HVDC infrastructure.
โOur 2200 V PowiGaN technology provides substantial voltage margin for emerging high-voltage power systems while enabling the high switching frequencies required to maximize power density,โ said Jennifer Lloyd, president and CEO at Power Integrations. โEmerging applications include next-generation AI data centers, where industry roadmaps point toward 1500 V distribution architectures, as well as future EV battery and auxiliary power systems operating at increasingly higher output voltages (48V). This milestone breakthrough extends the reach of GaN into voltage ranges traditionally served by SiC, enabling a compelling high-frequency alternative for applications such as solar, HVDC and advanced industrial power conversion.โ
