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Power Devices
ZNFOIE specializes in Electrical Transformers, Switching Power Supply Transformers, Power Devices, New Energy Circuit Breakers, and Low Voltage Circuit Breakers, delivering reliable power solutions for industrial, commercial, and renewable energy applications with high performance and quality standards.
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Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices
World’s first GaN-on-GaN power semiconductor, power systems based on NexGen Vertical GaN® (GaN-on-GaN) technology.
Infineon Technologies AG and Panasonic Corporation have signed an agreement for the joint development and production
GaN devices have proved that they are the best alternative for silicon used in semiconductors. GaN allows higher frequency than the alternatives in complex applications such as cable TV, defense communications, radar, stations for 5G, and VSAT. The companies are innovating GaN devices to make them more efficient & sustainable and lesser costly than before.
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Power Upgrading of Transmission Line by Combining AC DC Transmission and Analysis of UPFC
by Sandeep Sonwane | Pratik Ghutke "Power Upgrading of Transmission Line by Combining AC-DC Transmission and Analysis of UPFC"
Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-3 | Issue-4 , June 2019,
URL: https://www.ijtsrd.com/papers/ijtsrd23691.pdf
Paper URL: https://www.ijtsrd.com/engineering/electrical-engineering/23691/power-upgrading-of-transmission-line-by-combining-ac-dc-transmission-and-analysis-of-upfc/sandeep-sonwane
international journals in engineering, engineering journal, paper publication for engineering,
GaN HEMTs as lateral power devices have an order of magnitude lower gate charge and output charge compared to their silicon counterparts.
