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Zirconia thin films unlock new reversible nonpolar-to-polar mechanism

Researchers from National Taiwan University break traditional frameworks by unveiling a new symmetry-transition mechanism in ZrO2 thin films, achieving ultra-stable antiferroelectric behavior for up to 108 cycles. As the semiconductor industry pushes toward the nano and sub-nano scales, the search for high-performance materials to power next-generation electronics has intensified. Antiferroelectric (AFE) fluorite oxides, particularly zirconia (ZrO2), have long been favored for their high energy density and CMOS compatibility. However, traditional AFE ZrO2 thin films have been limited by the "wake-up effect," which results in a gradual increase in remanent polarization and leakage due to irreversible phase transition.